Nuclear methods in semiconductor physics langouche g soares j c stoquert j p. Emission channeling studies in semiconductors 2019-02-02

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Nuclear Methods in Semiconductor Physics, Volume 25

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing. Ion beams in semiconductor physics and technology S. Positron implantation profiles have been investigated over a range of about 1 μm on a gold solid solution containing 40 at. Rapid thermal annealing up to 900 K did not further increase the channeling maxi- mum yield, so that structural recovery is completed above about 500 K fig. For the evolution of the chemical short range order in the intermixed material two temperature regions can be distinguished. The annealing behavior of GaAs, GaP and InP after low temperature heavy ion implantation will be compared in section 2. Si is able to separate and crystallize more easily than Ge.

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Solid state physics at ISOLDE

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

Emission channeling studies after implanta- tion of isoelectronic In isotopes into GaAs, GaP, and InP will therefore monitor the annealing of implanta- tion defects observed from probe atoms on substitu- tional Ga or In sites. The results are discussed on the basis of fracture mechanics principles and the effect of the implantation-induced lattice damage on crack nucleation. The development of new construction materials for plasma reactor walls is crucial for the realisation and optimisation of fusion reactors. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition. The overall damage profile is insensitive to either beam divergence or beam misalignment but the damage accumulation levels are significantly affected by these effects. Bromley Plenum, New York, 1989 p. In the first part of this chapter we will describe the basic principles of these nuclear methods and illustrate them with a few relevant examples.

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Applications of radioactive ion beams to solid

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

While applying negative high voltage pulses between 1 and 5 kV with a duty cycle of 9% no loss of this texture was observed. Both In and Cd therefore occupy substitutional Ga-sites in GaP see also section 3. The strong planar 100 and 110 effects indicate substitutional Cd. Subsequent rapid thermal annealing of the as-implanted samples controls the formation of the nanocrystalline precipitates of ZnTe. This suggests also an accumulation of the implanted species, which can result in the formation of a very thin Ge-wire during subsequent annealing. Shown is the emission yield as a function of the tilt angle in X- and y-direction to the 111 axis.

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Emission channeling studies in semiconductors

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

Precipitates are not found by the channeling technique. The behavior described above makes it difficult to quantitatively determine e. An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs R. A thermally activated oxygen diffusion tail is observed for nitrogen implantation, which can be explained by the diffusion of Al cations in AlN. A large asymmetry of the diffuse X-ray scattering arises near the critical dose of the crystalline-to-amorphous transition and then relaxes again. All the experimental results presented here are explained by making use of these calculations. Nanosized particles can be prepared either by deposition of material onto a substrate or by removing atoms from an already existing structure.

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Nuclear Methods to Study Defects and Impurities in Si Materials

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

Similarly, amorphous SiO 2 layers, created by the ion irradiation of α-quartz samples, were epitaxially regrown after alkali post-implantation and annealing, thus demonstrating that the regrowth is independent of the production history of the amorphous film. The Emission Channelling technique, on the other hand, allows studying the precise lattice site location of the probe atoms from the channelling behaviour of the particles emitted by these probe nuclei. Lattice sites of ion implanted doj%nts in semiconductors and subsequent rw. Furthermore it can be expected that dechannel- ing is much more pronounced for In-rows than for P-rows. Donor-hydrogen complexes in silicon studied by Mössbauer spectroscopy Z. Ion implantation is shown to reduce the temperature threshold of fracture for all crystal faces tested. This variation allows us to test which role the nuclear and the electronic collisions plays for the damage processes.

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Nuclear methods in semiconductor physics : proceedings of Symposium F on Nuclear Methods in Semiconductor Physics of the 1991 E

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

The observation of gathered copper atoms in the solid solution, using the 3D atom-probe, tends to show that displacement cascades initiate the nucleation of copper clusters. Several dedicated nuclear methods such as Mössbauer Spectroscopy, Perturbed Angular Correlations and Low Temperature Nuclear Orientation allow to measure the hyperfine interaction at the nuclear site of the impurity atom by analysing the radiation emitted by these probe nuclei. The transverse particle diameter shows a linear increase with ion fluence, while the longitudinal diameter shrinks; the particle volume remains constant. When electronic materials are patterned to these small sizes, their physico-chemical properties show many aspects interdiffusion, electromigration, etc. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy.

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More than three decades of ISOLDE physics, Hyperfine Interactions

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

Temperature-dependent measurements show an extreme reduction in the Debye temperature of 36% for the samples annealed in a reducing atmosphere. Status Solidi 98 1980 K147. The free carrier concentration is one order of magnitude lower than the number of substitutional Zn atoms. Generation of intrinsic defects in CdSi:In by doing with Li atoms H. Wowever, in contrast to In and Cd implantations no clear annealing step is visible, which indicates that more than one defect configuration must be involved in the annealing process. The {loo and 110 planes both show strong planar channeling ef- fects, whereas the axial effect is almost absent.

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Nuclear Methods to Study Defects and Impurities in Si Materials

nuclear methods in semiconductor physics langouche g soares j c stoquert j p

For GaP a similar continuous recovery was observed up to 600 K fig. If the irradiation is carried out below 873 K an amorphous network forms which exhibits no uniform short range order. Nucleation of point defects in low-fluence ion-implanted GaAs and GaP W. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Ion beams in semiconductor physics and technology S.

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