Computational explorations in magnetron sputtering. Reading : Computational Explorations In Magnetron Sputtering 2019-03-11

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Samuel Kalt

computational explorations in magnetron sputtering

In the case when the mole fraction of oxygen increases, the self-bias voltage on the target decreases. The transport of fast electrons is, however, quite important for dc discharge because the spatial distribution of the net ionization rate is subject to the spatial behavior of the fast electrons. The current—voltage characteristics show a negative slope in contrast with many experimental results. The base pressure prior to sputtering is better than 5x 108 Torr and the argon pressure during sputtering is variable between 2 and 125 mTorr. The self-bias arises at the powered electrode due to the axial asymmetry of plasma caused by the magnetic field.

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Computational simulations on electron orbits in the magnetron sputtering plasmas

computational explorations in magnetron sputtering

Active oxygen has strong oxidative ability. The O- ions are trapped in the plasma bulk by the time-averaged potential. Cite this article as: Bunn, J. The new mask types have the benefits of the lower distortions of a typical continuous membrane mask, but maintain the advantage of the higher throughput stencil format because of the ultrathin films. Resonant frequency stress measurements of the ultrathin membrane bilayers were completed and subsequently used in the finite element simulation of the mask fabrication and pattern transfer.

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A Semi

computational explorations in magnetron sputtering

The axisymmetrical structure of plasma parameters such as plasma density, electric field, and electron and ion energy is examined in detail. The films are crystallized and the oxygen stoichiometry is adjusted by a rapid thermal annealing process. A series of simple computer models is developed, ultimately leading to predictive models of target erosion and deposition uniformity. Gas pressure has less influence on the target erosion in the straight region, but higher pressure could make the anomalous erosion severer. Abstract: This paper presents the work on the development of ceramic coating processing. The modeling algorithm was validated by comparing its results with experimental deposition rates obtained from a sputtering system utilizing sources with a multi-piece chimney assembly that consists of a lower ground shield and a removable gas chimney. © 2001 American Vacuum Society.

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Samuel Kalt

computational explorations in magnetron sputtering

The negative slope appears to be due to the narrow gap. Titanium Ti samples were used as the target whereas argon Ar was the ambient inert gas. This phenomenon is investigated in detail and a clear physical explanation is presented. The O- density is governed by a balance of generation and loss of O-. This resulted in the current densities which are very low compared to actual experimental results for a wider target-anode gap.

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Computational Explorations in Magnetron Sputtering

computational explorations in magnetron sputtering

A two-dimensional simulation of dc magnetron discharge is performed by a hybrid of fluid and particle models. Moreover, the simulation results of some models that are different in chamber size or gas pressure were obtained. The magnet unit consisting of a pair of inner and outer magnets and a yoke behind the target, generated a ring shaped permanent magnetic field in the discharge space. The influence of the operating parameters such as magnetic field, cathode voltage, and gas pressure on the target erosion of the rectangular planar dc magnetron is discussed in this paper. And the greater Cv of substrate, the surface roughness of the deposited thin film also increased. The spatial and temporal behaviors of such plasma parameters as plasma density, electric field, and discharge current are examined in detail. Jack McInerney is a senior staff scientist in the Computational Modeling group of Lam Research.

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Magnetron Sputterer

computational explorations in magnetron sputtering

The number densities of Ar+ and O- ions drastically increase when oxygen is added to the discharge gas Ar, and then saturated. It is utilized to make both single layer and multilayer thin films. However, the changes are much less than in the experiments, especially with respect to chamber size. The separation between the sputtering gun and the substrate is variable. The continuous membrane mask requires a low z-material for the carrier membrane and needs to be thinner than about 50 nm for throughput reasons. Films with critical temperatures for zero resistance as high as 88 K can be obtained in a two-step annealing process at 900 °C and 350 °C respectively. The positive ions Ar+, O2+, and O+ are distributed in such a way that the charge neutrality is kept in the plasma bulk.

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Reading : Computational Explorations In Magnetron Sputtering

computational explorations in magnetron sputtering

Through particle simulation for a prototype rectangular magnetron, with the same shape, stronger magnetic field could make the target erosion much sharper; with the same ratio of the field intensity in the end region to that in the straight region, stronger magnetic field could make the anomalous erosion in the curve-out region severer. Register a Free 1 month Trial Account. Considering distributions of neutral gases and radicals, the accuracy for Vdc may be improved. Test results show that the pull away distance can be reduced more than 5 times on average in some cases, by a factor of 15. This book walks you through the physics of Magnetron Sputtering in a step-by-step fashion. The increase of ionization points is obtained by increasing the glow discharge voltage. The characterization of first prototypes and evaluation of scan performance are presented in this work.

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(PDF) Computational Studies of Voltage in RF Magnetron Discharge

computational explorations in magnetron sputtering

The simulation is carried out for axisymmetrical magnetic fields. A series of simple computer models is developed, ultimately leading to predictive models of target erosion and deposition uniformity. Plasma processing is widely used in the mass production of industrial devices. Plasma oxidation is a possible route for improving the superconducting properties of incompletely oxidized films. When the deposition time increases to 30min, the preferred growth orientations appears, which is 112 crystal face. Starting with the magnetic fields crucial to efficient operation, the book then looks at the electric fields that power the sputter process, the motion of electrons in the plasma, target erosion and finally deposition. The stencil mask format has the disadvantage of needing complementary masks in case of unfavorable patterns like isolated islands.

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Monte Carlo Simulation Model for Magnetron Sputtering Deposition

computational explorations in magnetron sputtering

This book walks you through the physics of Magnetron Sputtering in a step-by-step fashion. The longer deposition time is, and the rougher the surface possesses. The position of a maximum erosion on the copper target exactly coincides with the position where the incident Ar{sup +} ion flux is maximum. The results show that marked double minima in the dielectric erosion profile was caused by the existence of the charging on the dielectric material during ion sputtering process. The profiles of plasma distribution correspond to the shape of the magnetic field. Such a configuration is desirable for reducing contamination.

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A Semi

computational explorations in magnetron sputtering

The spatial and temporal behavior of magnetron discharge is examined in detail. Furthermore, higher cathode voltage could not only make the target erosion wider but also make the anomalous erosion weaker. Starting with the magnetic fields crucial to efficient operation, the book then looks at the electric fields that power the sputter process, the motion of electrons in the plasma, target erosion and finally deposition. However, with the thickness increasing, the 111 will be the preferred orientation. In the effect of vacancy concentration Cv of substrate, the Young's modulus of sample decreased as the Cv of substrate increased but the adhesion force will increase as the Cv of substrate increases. The model also depicted the performance of magnetron deposition due to change of processing parameters. Since the peak point of O- density does not coincide with that of electron density, the spatial distributions of Ar+, O2+, and O+ have two peaks.

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